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The preswitching nonohmic behaviour of amorphous chalcogenide films is explained by Joule heating with heat flow both parallel and perpendicular to the current. Expressions relating the threshold voltage Vc to the band gap ΔE are consistent with measurements of I/V curves and Vc at elevated pressures; it is inferred that(∂ΔE/∂P)≃−6.6×10−6 eV bar-1
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Thomas et al. (1970) studied this question.
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