Deep Level Transient Spectroscopy Measurements in Hg0.3Cd0.7Te Single Crystals

Deep majority carrier traps in p-Hg0.3Cd0.7Te are studied by capacitance transient spectroscopy (DLTS). Two trapping levels H1 and H2 are found with activation enthalpies of 0.17 and 0.35 eV, respectively. The capture cross-section of H2 which is found to be temperature dependent can be described by σp(H2) = 3.7 × 10−16 exp (−0.13/kT) cm2. Comparison with published results on H1−xCdxTe (x < 0.5) and CdTe hints about the identity of these defects.