DLTS study of the influence of plastic deformation on deep levels in n‐type CdTe

Using transient capacitance spectroscopy, deep-level defects which are introduced by plastic deformation in n‐type CdTe have been looked for. Within the range 0·1–0·75 eV below the conduction-band edge, one line at Ee -0·72 eV associated with deformation-induced defects has been found. The characteristics of this line are different from those associated with isolated point defects : its shape is strongly asymmetric and its amplitude varies non-exponentially with duration of the filling pulse. These characteristics are well known from deep-level transient spectroscopy (DLTS) measurements on deformed elemental semiconductors. The defect concentrations correspond well to the dislocation densities. Further changes in transient capacitance spectra of deformed samples have not been detected (detection limit 1012cm−3).