Key result
A short high-temperature step alters hydrogen content, bonding, density, and optical absorption of silicon nitride films.
The density and thermal stability of a-SiNx:H films are critical for achieving effective bulk passivation in multicrystalline silicon solar cells during high-temperature processing.
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May alter passivation efficacy in multicrystalline silicon solar cells; leaves open optimal annealing protocols for a-SiNx:H films.
Sonntag et al. (1978) studied this question. Short high-temperature step vs. Before high-temperature step was evaluated on Changes in hydrogen content, bonding types, mass density, and optical absorption. A short high-temperature step induced significant changes in hydrogen content, bonding types, mass density, and optical absorption of plasma deposited silicon nitride films.
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