MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn[N(SiMe3)2]2 and Ammonia as Precursors

Thin films of cubic zinc nitride, Zn3N2, were obtained by metal-organic (MO)CVD at substrate temperatures between 275 °C and 410 °C. Bis[bis(trimethylsilyl)amido]zinc was used as source for Zn and ammonia as the N source. The films were deposited on SiO2/Si(100) and on zinc oxide-coated sapphire (c-plane Al2O3). Polycrystalline films were obtained at a deposition temperature of 350 °C. Typical growth rates were 600 nm h–1. The influence of the temperature and the flow rate of the reactive gas on the film morphology were studied.