Uniform Array of GaN Quantum Dots in AlGaN Matrix by Selective MOCVD Growth

We demonstrate GaN quantum dots (QDs) embedded in an AlGaN matrix, using metalorganic chemical vapor selective deposition, on a uniform array of hexagonal pyramids of GaN. The hexagonal pyramids have clear {101} side facets and their radius of curvature at the tops is not larger than 10 nm, which indicates that very sharp tops are realized. Intense photoluminescence was observed from GaN QDs at a peak energy of 3.61 eV at room temperature.