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The reproducibility over temperature and time of the pull-in voltage of micromechanical structures has been analyzed and verified using fabricated devices in silicon. The pull-in structures are intended for use as an on-chip voltage reference. Microbeams of 100-/spl mu/m length, 3-/spl mu/m width, and 11-/spl mu/m thickness are electrostatically actuated with a very reproducible pull-in voltage at 9.1 V. Devices demonstrated an initial drift of -12 mV over 10 days and stabilized within the 500-/spl mu/V measurement uncertainty. The measured temperature coefficient of -1 mV/K is in good agreement with the analysis and is due to the combined effect of thermal expansion and the temperature dependence of the Young's modulus in silicon.
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Rocha et al. (2003) studied this question.
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