Deep traps analysis in AlGaN/GaN heterostructure transistors

AlGaN/GaN high electron mobility transistors are investigated by DLTS measurements. 6 different are extracted with the following activation energies: 0.12 eV, 0.15 eV, 0.21 eV, 0.42 eV, 0.49 eV and 0.94 eV. Based on comparison with literature results and measurements as a function of the pulse reverse bias, the trap localisation in the structure is discussed. Additional measurements as a function of the filling pulse duration reveal the presence of decorated extended defects in the samples. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)