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January 26, 2009Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

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Authors

ABAdam R. BoydAixtron (Germany)SDStefan DegrooteSoitec (France)MLMaarten LeysIMEC

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Cite This Study

Boyd et al. (2009) studied this question.

synapsesocial.com/papers/6aa6323e50dab972bddd5feahttps://doi.org/10.1002/pssc.200880925
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