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Interwell carrier transport and distribution has been studied at room temperature by time-resolved photoluminescence in custom-designed InAlGaAs/InP quantum well laser structures with an enlarged well. The experiments have been successfully described by a model which includes thermionic capture/emission over the quantum well interfaces and drift/diffusion in the barrier regions. In the InAlGaAs structures, a considerable increase of the interwell carrier transport velocity, as compared to InGaAsP, is observed.
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Marcinkevičius et al. (1997) studied this question.
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