Low‐Temperature Growth of p‐Type ZnO Thin Films via Plasma‐Assisted MOCVD

N‐doped p‐type ZnO films are grown on glass substrates by plasma‐assisted metal–organic CVD at a low temperature of 250 °C. Scanning electron microscopy, X‐ray diffraction, and Raman scattering spectroscopy are carried out to investigate the crystalline properties of the ZnO films. Results show a high degree of (0002) orientation and a little tensile stress in the films. Hall analyses show homogeneous p‐type conduction. Room‐temperature photoluminescence spectra display strong ultraviolet emission with a clear acceptor fingerprint.