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A novel ohmic contact 96% Au-4% Mn has been established for p-type GaAs. A specific contact resistivity of 2 × 10−7 Ωcm2 has been obtained on 2 × 1019 cm−3 epitaxial layers after alloying, and a resistivity of 2 × 10−6 Ωcm2 has been obtained on 2 × 1020 cm−3 doped layers without alloying. The contact is stable and reproducible.
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Dubon‐Chevallier et al. (1985) studied this question.
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