P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm2. The as-grown Si p+in+ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P δ-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675°C and the PVCR improves to 2.8 for a 575°C 1 min anneal.