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October 25, 1993Applied Physics Letters

Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures

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Authors

HJH. JorkeForschungszentrum JülichHKH. KibbelDaimler (United Kingdom)KSK.M. StrohmDaimler (Germany)

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Jorke et al. (1993) studied this question.

synapsesocial.com/papers/6a907b65039ece43b30d514fhttps://doi.org/10.1063/1.110490
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