Resistance switching memory device with a nanoscale confined current path

The impact of a nanoscale confined current path is demonstrated on a resistance switching memory device. The memory element consists of a Ti layer constricted by an insulating self-assembly nanogap oxide, in which a redox reaction is anticipated for the resistance change without an aid of a forming process. The device exhibits a resistance ratio greater than 100, a data retention longer than 3.7×106s, an endurance of more than 2000cycles, and a switching operation temperature up to 125°C at an operation condition of ±2.5V with 50–100ns duration, evidencing an essential role of the nanostructure on the device performance.