Fabrication of high open‐circuit voltage a‐Si1–xOx:H solar cells by using p‐a‐Si1–xOx:H as window layer

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We have deposited p‐type hydrogenated amorphous silicon oxide (p‐a‐Si1‐xOx:H) by 13.56 MHz radio frequency plasma enhanced chemical vapor deposition (RF‐PECVD) using a gas mixture of silane (SiH4), hydrogen (H2), carbon dioxide (CO2) and diborane (B2H6). Optical and electrical characterization showed that high quality wide optical band‐gap (Eopt) p‐a‐Si1‐xOx:H films could be achieved by using low doping concentration and high H2 dilution. We also fabricated a‐Si1‐xOx:H single‐junction p‐i‐n solar cells by using p‐a‐Si1‐xOx:H and intrinsic a‐Si1‐xOx:H as window and absorber layer, respectively. These solar cells exhibited open circuit voltages of over 1.05 V and good short‐circuit currents as well as fill factors (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)