The charge storage and program/erase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-/spl kappa/ charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO/sub 2/ as well as the good charge-retention time of Al/sub 2/O/sub 3/, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO/sub 2/ and Al/sub 2/O/sub 3/ compositions as a blocking-oxide layer in SONOS-type structures is also investigated.
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Tan et al. (2006) studied this question.
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