Reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) are used to study the surface and growth of GaAs (311)B. The RHEED pattern reveals a lateral periodicity of 3.2 nm along the [011̄] direction, which is confirmed in real space by STM images. Pronounced RHEED intensity oscillations during the homoepitaxial growth on GaAs(311)B were observed in a wide substrate temperature range.
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Wang et al. (2001) studied this question.
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