Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates

We have studied the optical properties of (InGa)As self-assembled quantum dots grown on (311)B-oriented GaAs substrates. The luminescence linewidth is considerably narrower than that of similar samples grown on (100). The difference is explained in terms of the in-plane coupling of dots which is more significant in (311)B. In order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge emitting lasers by extending the well-known technology for (100) to the (311)B devices.