We studied the effect of carrier population on light emission polarization of green InGaN quantum wells (QWs) on the semipolar (1122) plane. The 3 nm thick QWs emitting light at about 540 nm at low pumping power have electrical field (E) component E∥[1123] stronger than that E∥[1100]. However, we found that increasing the pumping power changed the sign of the polarization ratio. Using the varied stripe length (VSL) method, we measured the optical gain for light propagating ∥[1123] direction to be ∼2 times that of light propagating ∥[1100] direction. We explain this behavior by inhomogeneous QW state filling.
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Sizov et al. (2009) studied this question.