High speed non-selfaligned GaInP/GaAs-TEBT

Tunnelling emitter bipolar transistors (TEBTs) with a 10 nm GaInP layer between emitter and base acting as a hole repelling potential barrier in the valence band have been fabricated from MOCVD grown Ga0.5In0.5P/GaAs layer structures. The carbon doped base layer (110nm, 6.5 × 1019cm-3) exhibits a base sheet resistance of 100Ω/□. DC and RF characterisation of a non-selfaligned GaAs asymmetric TEBT with fr > 40 GHz and fmax > 90 GHz are reported.