Chalcopyrite CuInS2, thin layers were successfully prepared by a single-source metal-organic chemical vapour deposition (MOCVD) process using Bu2In(SPri)Cu(S2CNPri2) as a new source material at 400 °C of Tsub under reduced pressure of ca. 0.8 Torr.
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Nomura et al. (1992) studied this question.