Sharp excitonic photoluminescence from epitaxial InAs

The optically excited luminescence of epitaxial InAs has been studied at 1.4 K, revealing well-resolved emission lines identified as the exciton–polariton, neutral–acceptor–bound exciton principal and two-hole transitions, donor–acceptor pair band, and phonon assisted transitions. These features are seen in samples of high purity InAs grown by metalorganic chemical vapor deposition on InAs substrates using tertiarybutylarsine and trimethylindium. Only one acceptor species is observed, having a 1 S3/2–2 S3/2 transition energy of 13.39±0.01 meV, and an acceptor–bound exciton binding energy of 2.11±0.03 meV.