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Silicon carbide nanobelts have been prepared by a reaction of CH 3 CH 2 OH, SiCl 4, and Li in an autoclave at 600 °C. According to X-ray powder diffraction, the nanobelts crystallize with the structure of 3C−SiC. Electron microscopy investigations have revealed that the nanobelts are usually 50−200 nm wide, 20−60 nm thick, and up to tens of micrometers long. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from the 3C−SiC nanobelts, which are different from previous observations of 3C−SiC materials. A possible lithium-assisted growth mechanism for the nanobelts was proposed.
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Xi et al. (2004) studied this question.
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