Transverse Magnetoresistance of n‐Type Ge in Quantizing Magnetic Fields

The anisotropy and the magnetic field dependences of ϱ⟂H/ϱ0 were investigated on n‐Ge (ne ≈ 1.59 × 1013 × m−3 cm−3) in the range of dominant phonon scattering (at 77 °K) in quantizing magnetic fields (up to 250 kOe). The developed theory is in quantitative accordance with the experimental data. It is shown that: the difference of magnetic field dependences ϱ⟂/H/ϱ0 = f(H) for H ‖ [001] or [011] (both at j ‖ [100] and at j ‖ [110]) is caused by the effect of intervalley redistribution of current carriers in quantizing H; the crystal imperfections (type of Herring statistically distributed inhomogenities) do not reveal itself noticeably at the quantization.