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High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar Transistor) stacks is proposed in this paper. To protect the Marx generator at the moment of breakdown, AOCP (Active Over-Current Protection) part is included. The Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and inductors are used to charge the high voltage capacitor at each stage without power loss. These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed Marx generator implementation uses IGBT stack with a simple driver and has modular design. This system structure gives compactness and easiness to implement the total system. Some experimental and simulated results are included to verify the system performances in this paper.
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Kim et al. (2007) studied this question.
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