Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors

We study theoretically the influence of the optical generation of electrons and holes in the base of an induced-base hot-electron transistor (IBHET) on its high-frequency operation. High electron mobility is assumed in the IBHET base, so that the standing plasma waves in the base can substantially affect the induced-base IBHET performance. It is shown that the photogeneration leads to marked transformation of the resonant peaks in the IBHET frequency-dependent transconductance. This is due to the dependence of the resonant frequencies and the electron scattering time on the concentration of the photogenerated electrons and holes. The latter results in the shift of the resonant peaks to higher frequencies and their broadening. This effect can be used for an effective optical control of IBHETs operation in the terahertz range of signal frequencies.