Answers are grounded in this paper and cite their sources.
Well-gettered diodes behave as ideal Shockley diodes for forward bias. For reverse bias their characteristics may deviate from the Shockley theory according to the preparation precedure. A model for this behavior is presented; it ascribes the deviation to a generation current produced at donor-acceptor shallow levels in the depletion layer.
No takes yet. Share an insight, caveat, or question.
Cerofolini et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: