Phosphosilicate glass gettering of silicon wafers in which diodes had been formed has been studied. The amount and identity of the gettered impurities were determined by means of Rutherford backscattering of 2 MeV He + ions. The principal gettered impurities are Cu and Fe (∼10 15 cm −2 ) and a heavy mass species in the range Pt‐Pb, presumably Au (∼10 13 cm −2 ). Gettering behavior is correlated with diode properties; the diode quality increases with increased amounts of gettered impurities.
No takes yet. Share an insight, caveat, or question.
Meek et al. (1974) studied this question.