RF-magnetron sputtered lanthanum aluminate buffer layers on silicon

Optimization of the preparation conditions of in situ highly textured thin films of LaAlO 3 on silicon (100) substrates, by planar RF-magnetron sputtering, was investigated. The parameters which have been considered for this optimization include: substrate temperature (T), gas pressure (P), the ratio of flow of oxygen to argon O 2 /Ar (all during sputtering of the layer), and the deposition power. Furthermore, different precleaning and oxidation treatments were applied to the silicon surface in order to remove the amorphous layer of the silicon native oxide (SiO 2 ). This was to enhance epitaxial growth of LaAlO 3 layers on silicon.