Effect of Nitridation Rate on the Composition and Conductivity of Titanium Nitride Films Prepared from Sol–Gel Titania

Nitridation of TiO 2 films in NH 3 was studied as a function of heating rate by 14 N(α, α) 14 N and 16 O(α, α) 16 O nuclear resonance, Auger depth profiling, X‐ray diffraction, and electrical conductivity measurements. TiN films containing minimal amount of oxygen and exhibiting the lowest resistivity were obtained when the fastest nitridation rate (70°C/min) was used. Nitridation at slower rates not only increased the film‐oxygen content and electrical resistivity but also produced an oxygen concentration gradient across the film.