Selective epitaxial growth by molecular beam epitaxy

Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h -1 . Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out. The diffusion length of Ga on SiO 2 at 700 degrees is estimated to be about 20 to 30 mu m. The results demonstrate that selective epitaxial growth by MBE can be used as a device fabrication process where thin localized GaAs or InAs epilayers are required.