Experimental study demonstrates high-speed 4H-SiC epitaxial growth reaching 50 μm/h on 150 mm wafers, suggesting improved throughput and quality for power electronic device manufacturing.
A single wafer type 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation was developed. The rotation of the wafer at high speed significantly enhances the growth rate, and high growth rates of 40–50 μm/h are possible on 4°off-cut 4H-SiC substrates. In addition, a low defect density and smooth surface without macro step bunching can be achieved. Excellent uniformity of thickness and doping concentration was obtained for a 150 mm wafer at a high growth rate of 50 μm/h.
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Fujibayashi et al. (2014) studied this question.
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