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A magnetic “spin filter” tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal, is used to create a magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.
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LeClair et al. (2002) studied this question.
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