The photoluminescence (PL) spectral change in a-Si:H induced by prolonged exposure to strong light was studied at 7 K and 300 K. The light-induced change in PL is twofold, a fatigue of the PL main peak and an enhancement in the low energy region. Careful analysis of the intensity changes for exposure temperature dependence and excitation intensity dependence suggests that at least two processes are involved. The PL-spectral change associated with light soaking is interpreted as the photocreation of radiative and nonradiative defects.
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Yoshida et al. (1990) studied this question.
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