In this study, the state-of-the-art vertical gallium oxide MOSFET with the fin shaped source is numerically investigated. With the simulation environment, whose results for the electrical characteristics are in close agreement with the available experimental results, the impact of the fin shape is studied. It is found that a rectangular fin with a height of 1.0 μ m and a width of 0.3 μ m can give a low on-resistance per unit area and a low drain-induced barrier lowering (DIBL) simultaneously. Moreover, the tapered fins are simulated to estimate the sensitivity of the on-resistance, the DIBL, and the subthreshold slope.
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Park et al. (2019) studied this question.
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