Gate oxide evaluations from high‐e tests

Recent published data show the complete pattern of defect failures, intrinsic failures and the transition region between them. This explains many earlier misinterpretations. It provides a life curve for intrinsic failures, extending far beyond observation times in most cases, using a plot of acceleration factors independent of the 1/E vs. E relationship controversy between 6MV/cm. Life is linear with 1/E at 6MV/cm and above. Estimates of defect densities are available from the transition region, and are capable of extrapolation from high‐E life tests to low gradients of operation. At voltage gradients much below 6MV/cm, however, this extrapolation cannot be corroborated in the long straight line of the transition. A single point test can be performed at about the time to the inflection point at 8 or 9 MV/cm stress to serve as a quality control point for the oxide defect density. This transition life line, however, can be used to derive a plot of failure rate which can be used to define screening procedures.