Transient Thermal Characterization Method for GaN HEMTs With Different Device Architectures

Thermal management of power conversion systems with gallium nitride (GaN) power devices is key for applying them to home appliances, renewable energy systems, and so on. There are several methodologies for transient thermal characterization of GaN high electron mobility transistors (HEMTs). This paper demonstrates the practical measurement methods of the transient thermal characterization for commercially available GaN HEMTs based on the static test method, focusing on their device architectures, such as cascode connection, p-GaN gate structure, and an integrated gate driver. Measurement methods applicable to GaN HEMTs, depending on architectures and the validity of the obtained transient thermal resistance by each method, are clarified from a device-physics perspective.