Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of~45% at room temperature were achieved at the wavelength of 290–300 nm for a packaged device with an active area of1× 1\ mm². The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range from room temperature to 230~∘C.
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Cha et al. (2008) studied this question.
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