This letter reports a new mechanism for the enhanced impact-ionization rate (Isub/Id) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (Vdsat), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, Vdsatbecomes lower, resulting in the observed Vg-dependent enhancement in Isub/Id. This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.
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Su et al. (2007) studied this question.
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