We have fabricated 5.6 vol.% BaHfO 3 (BHO)-doped SmBa 2 Cu 3 O y (SmBCO) films at a low substrate temperature of 750 °C by using the low temperature growth (LTG) technique with a seed layer. Using the LTG technique, we can obtain a purely c -axis oriented SmBCO film even at low growth temperatures. The LTG technique also greatly increases the number density of BHO nanorods. The size and matching field of the BHO nanorods in the films were 5.4 nm and 9.9 T. Transport measurements were carried out, and a high irreversibility field ( B irr ) and strong flux pinning force density ( F p ) were obtained. The B irr was 15.1 T at 77 K for B//c . The maximum F p of 407 GN m −3 in 10 T at 40 K and 770 GN m −3 from 9 to 17 T at 20 K have been measured. We believe that the LTG technique can be considered as important for improving of flux pinning performance in BaMO 3 (BMO: M = Zr, Sn and Hf)-doped SmBCO coated conductors.
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Miura et al. (2015) studied this question.
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