Structural and Optical Emission Uniformity of m -Plane InGaN Single Quantum Wells in Core–Shell Nanorods

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Controlling the long-range homogeneity of core–shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ∼7 meV·μm–1 along the m-plane facets from core–shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 μm. High-resolution transmission electron microscopy and spatially resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short-range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core–shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.