An effort was undertaken to measure defect-induced changes of magnetic anisotropy in a nickel single crystal after low-temperature electron irradiation. A dynamic measuring method was used after reorienting a certain fraction of the radiation-induced defects in an external magnetic field of 5 kOe. In the temperature range of recovery stage IC, D, E (45 to 60 K) the crystallographic direction dependence of defect-induced anisotropy could be determined. The results show that in this temperature range the 〈100〉 split interstitial is mobile and able to reorient. The obtained data are further discussed with respect to existing information on magnetic after effect and resistivity annealing in electron-irradiated nickel.
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Forsch et al. (1974) studied this question.
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