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September 1, 1997Applied Physics Letters

Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates

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MKMin Hong KimCSCheolsoo SonePohang University of Science and TechnologyJYJae Hyung YiHiroshima University

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Kim et al. (1997) studied this question.

synapsesocial.com/papers/6aa86917ee3dae1cf0d800fahttps://doi.org/10.1063/1.119859
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  1. 1Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates1994 · 97 citations
  2. 2Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition1996 · 98 citations
  3. 3Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy1987 · 179 citations
  4. 4Nitridation process of sapphire substrate surface and its effect on the growth of GaN1996 · 263 citations
  5. 5The Use of Metalorganics in the Preparation of Semiconductor Materials1971 · 302 citations