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The existence of series resistance in metal–oxide–semiconductor (MOS) devices can result in both the degradation of capacitance at a high frequency and the decrease in conductance. Using a conventional conductance method that does not consider the series resistance, the interface trap density can be underestimated. We propose an improved conductance method based on an equivalent circuit model including the series resistance. Compared with the conventional method, this new method enables the accurate determination of interface trap density.
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Yang et al. (2005) studied this question.
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