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Native vacancies in Te-doped (5×10¹⁶--5×10¹⁸cm^-3) GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy--TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.
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Gebauer et al. (1999) studied this question.
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