The merging of spintronics with organic RAM technology is demonstrated experimentally for the first time with the multipurpose device reported here. An unconventional configuration sandwiching a π-conjugated organic semiconductor between two ferromagnetic electrodes (see figure) allows two different, unrelated physical effects to be superimposed. The novel single-cell device shows both magnetoresistance and nonvolatile electric memory.
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Hueso et al. (2007) studied this question.
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