900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high reverse breakdown voltage (VBR) of -900 V was achieved (at 1 μA/mm with grounded substrate), along with a small reverse leakage current (IR) of ~20 nA/mm at -750 V. The devices also presented a small turn-ON voltage (VON) of 0.58 ± 0.02 V, a small increase in forward voltage (ΔFV) of ~0.8 V, a high ON/OFF ratio over 1010, and a high forward breakdown voltage (VBF) of 800 V at 20 nA/mm with grounded substrate. These results demonstrate a new milestone for RB GaN transistors, and open enormous opportunities for integrated GaN power devices.