Differential scanning calorimetry (DSC) studies of P-doped hydrogenated amorphous silicon (a-Si:H) show characteristic behaviors of the relaxation phenomena related to the defect frozen states. The equilibration temperature T E * detected by DSC agrees well with T E determined by the temperature dependence of dc conductivity. The exothermic reaction detected by DSC is semiquantitatively interpreted by the theoretical model of the equilibrium process of defects.
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Nasu et al. (1989) studied this question.
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