Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Al2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance–voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700 °C–950 °C increases with increasing annealing temperature. At the highest annealing temperature of 950 °C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.